WCSS0418V1P Datasheet, PDF (8/17 Pages) Weida Semiconductor, Inc. – 256K x 18 Synchronous-Pipelined Cache RAM

WCSS0418V1P
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
Min.
V_DD
V_DDQ
V_OH
V_OL
V_IH
V_IH
V_IL
V_IL
I_X
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input HIGH Voltage
Input LOW Voltage^[7]
Input LOW Voltage^[7]
Input Load Current
except ZZ and MODE
3.3V −5%/+10%
2.5V −5% to 3.3V +10%
V_DDQ = 3.3V, V_DD = Min., I_OH = –4.0 mA
V_DDQ = 2.5V, V_DD = Min., I_OH = –2.0 mA
V_DDQ = 3.3V, V_DD = Min., I_OL = 8.0 mA
V_DDQ = 2.5V, V_DD = Min., I_OL = 2.0 mA
V_DDQ = 3.3V
V_DDQ = 2.5V
V_DDQ = 3.3V
V_DDQ = 2.5V
GND ≤ V_I ≤ V_DDQ
3.135
2.375
2.4
2.0
2.0
1.7
–0.3
–0.3
−5
Input Current of MODE Input = V_SS
−30
Input = V_DDQ
Input Current of ZZ
Input = V_SS
−5
Input = V_DDQ
I_OZ
Output Leakage
GND ≤ V_I ≤ V_DDQ, Output Disabled
−5
Current
I_DD
V_DD Operating Supply V_DD = Max., I_OUT = 0 mA,
6-ns cycle, 166 MHz
Current
f = f_MAX = 1/t_CYC
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
I_SB1
Automatic CS
Max. V_DD, Device Deselected, 6-ns cycle, 166 MHz
Power-Down
Current—TTL Inputs
V_IN ≥ V_IH or V_IN ≤ V_IL
f = f_MAX = 1/t_CYC
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
I_SB2
Automatic CS
Max. V_DD, Device Deselected,
Power-Down
V_IN ≤ 0.3V or V_IN > V_DDQ – 0.3V,
Current—CMOS Inputs f = 0
I_SB3
Automatic CS
Max. V_DD, Device Deselected, or 6-ns cycle, 166 MHz
Power-Down
V_IN ≤ 0.3V or V_IN > V_DDQ – 0.3V
Current—CMOS Inputs f = f_MAX = 1/t_CYC
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
I_SB4
Automatic CS
Max. V_DD, Device Deselected,
Power-Down
V_IN ≥ V_IH or V_IN ≤ V_IL, f = 0
Current—TTL Inputs
Max.
3.6
3.6
0.4
0.7
V_DD + 0.3V
V_DD + 0.3V
0.8
0.7
5
5
30
5
420
375
325
150
125
115
10
120
95
85
18
Unit
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Capacitance^[9]
Parameter
Description
Test Conditions
C_IN
C_CLK
C_I/O
Input Capacitance
Clock Input Capacitance
Input/Output Capacitance
T_A = 25°C, f = 1 MHz,
V_DD = 3.3V,
V_DDQ = 3.3V
Note:
9. Tested initially and after any design or process changes that may affect these parameters.
Max.
4
4
4
Unit
pF
pF
pF
Document #: 38-05247
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