W19B320ATB Datasheet, PDF(48/53 Page) Winbond – 4M × 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY

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W19B320ATB Datasheet, PDF (48/53 Pages) Winbond – 4M × 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY

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W19B320AT/B

9.14 Alternate #CE Controlled Write (Erase/Program) Operation Timing

Address

#WE

#OE

#CE

DATA

#RESET

RY/#BY

555 for program

2AA for erase

TWC

TWH

t GHEL

PA for program

SA for sector erase

555 for chip erase

TAS TAH

#Data Polling

TCP

TWS

TCPH

TDS

TDH

TRH

A0 for program

55 for erase

T PW, T ACCP, or T SE

TBUSY

PD for program

30 for sector erase

10 for chip erase

#DQ7 D OUT

Notes:

1. Firgure indicates last two bus cycles of a program or erase operation.

2. PA= program address, SA= sector address, PD= program data.

3. #DQ7 is the complement of the data written to the device. Dout is the data written to the device.

4. Waveforms are for the word mode.

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