W19B320ATB Datasheet, PDF (27/53 Pages) Winbond – 4M × 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY

W19B320AT/B
7.5.2 Device Geometry Definition
DESCRIPTION
Device size =2N bytes
ADDRESS
ADDRESS
(WORD DATA (BYTE
MODE)
MODE)
27h
0016h
4Eh
Flash device interface description (refer to CFI publication 100)
28h
0002h
50h
29h
0000h
52h
Max. number of bytes in multi-byte write=2N (00h=not supported)
2Ah
2Bh
0000h
0000h
54h
56h
Number of Erase Block Regions within devices
2Ch
0002h
58h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100 )
Erase Block Region 2 Information
2Dh
0007h
5Ah
2Eh
0000h
5Ch
2Fh
0020h
5Eh
30h
0000h
60h
31h
003Eh
62h
32h
0000h
64h
33h
0000h
66h
34h
0001h
68h
Erase Block Region 3 Information
35h
0000h
6Ah
36h
0000h
6Ch
37h
0000h
6Eh
38h
0000h
70h
Erase Block Region 4 Information
39h
0000h
72h
3Ah
0000h
74h
3Bh
0000h
76h
3Ch
0000h
78h
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Publication Release Date: December 27, 2005
Revision A4