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W19B320ATB Datasheet, PDF (29/53 Pages) Winbond – 4M × 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY
W19B320AT/B
7.5.4 Command Definitions
COMMAND
SEQUENCE
(note 1 )
CYCLE FIRST
SECOND
ADDR DATA ADDR DATA
BUS CYCLES (note 2-5)
THIRD
FOURTH
ADDR DATA ADDR DATA
FIFTH
SIXTH
ADDR DATA ADDR DATA
Read (note 6)
1
RA RD
Reset (note 7)
1
XXX F0
Normal
Program
Word
555
2AA
555
4
AA
55
A0
PA
PD
Byte
AAA
555
AAA
Word
Unlock Bypass
3
Byte
555
2AA
AA
55
AAA
555
555
20
AAA
Unlock Bypass
Program (note 11)
2
XXX A0 PA PD
Unlock Bypass Reset
(note12)
2
BA
90 XXX 00
Chip Erase
Word
6
Byte
555
2AA
AA
55
AAA
555
555
555
2AA
555
80
AA
55
10
AAA
AAA
555
AAA
Sector Erase
Word
6
Byte
555
2AA
AA
55
AAA
555
555
555
2AA
80
AA
55 SA 30
AAA
AAA
555
Erase Suspend
(note 13)
1
BA B0
Erase Resume
(note 14)
1
BA
30
Manufacturer Word
Code
Byte
4
555
2AA
(BA)555
AA
55
90 (BA)X00 DA
AAA
555
(BA)AAA
Device
Code
Word
Byte
6
555
AA
2AA
55
(BA)555
(BA)X01
90
7E
(BA)X0E
0A
(BA)X0
F 00/01
AAA
555
(BA)AAA
(BA)x02
(BA)X1C
(BA)x1E
Security Word
Sector Factory
Protect (note Byte
4
9)
555
2AA
(BA)555
(BA)X03
AA
55
90
82/02
AAA
555
(BA)AAA
(BA)X06
Sector/
Sector
Word
Block
Protect
4
Verify (note Byte
10)
555
2AA
(BA)555
(SA)X02
AA
55
90
00/01
AAA
555
(BA)AAA
(SA)X04
Enter Security
Sector Region
Word
Byte
3
Exit Security
Sector Region
Word
Byte
4
Common Flash Word
Interface (CFI)
1
Query (note 15) Byte
555
2AA
AA
55
AAA
555
555
2AA
AA
55
AAA
555
55
98
AA
555
88
AAA
555
90 XXX
00
AAA
Legend:
X = Don’t Care
RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the #WE or #CE pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of #WE or #CE pulse, whichever happens first.
RD = Data read from location RA during read operation.
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Publication Release Date: December 27, 2005
Revision A4