W989D6DB Datasheet, PDF (27/64 Pages) Winbond – Standard Self Refresh Mode

W989D6DB / W989D2DB
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
Parameter
Symbol
Values
Unit
Min
Max
Voltage on VDD relative to VSS
VDD
−0.5
2.3
V
Voltage on VDDQ relative to VSS
VDDQ
−0.5
2.3
V
Voltage on any pin relative to VSS
VIN, VOUT
−0.5
2.3
V
Operating Temperature
-25
TCASE
-40
85
°C
85
Storage Temperature
TSTG
-55
150
°C
Short Circuit Output Current
IOUT
±50
mA
Power Dissipation
PD
1.0
W
Note:
stresses greater than those listed in “absolute maximum ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability
9.2 Operating Conditions
Parameter
Symbol Min
Supply Voltage
VDD
1.7
Supply Voltage (for I/O Buffer)
VDDQ
1.7
Input High level Voltage
VIH 0.8 x VDDQ
Input Low level Voltage
LVCOMS Output ^H^ Level Voltage (IOUT = -0.1 mA )
LVCMOS Output ^L^ Level Voltage (IOUT = +0.1 mA )
VIL
VOH
VOL
-0.3
0.9 x VDDQ
-
Input Leakage Current
II(L)
-1
(0V ≤ VIN ≤ VDD, all other pins not under test = 0V)
Output Leakage Current (Output disable , 0V ≤ VOUT
≤ VDDQ)
IO(L)
-5
Note: VIH(max) = VDD/ VDDQ+1.2V for pulse width ≤ 5 nS
VIL(min) = VSS/ VSSQ-1.2V for pulse width ≤ 5 nS
Typ
Max
1.8
1.95
1.8
1.95
- VDDQ + 0.3
-
+0.3
-
-
-
0.2
-
1
-
5
Unit
V
V
V
V
V
V
A
A
9.3 Capacitance
Parameter
Input Capacitance
( A[n:0], BA0, BA1, CS , RAS , CAS , WE , DQM, CKE)
Input Capacitance (CLK)
Input/Output Capacitance
Note: These parameters are periodically sampled and not 100% tested.
Symbol
CI
CCLK
CIO
Min.
1.5
1.5
3.0
Max.
3.0
3.5
6.5
Unit
pf
pf
pf
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Publication Release Date: Mar. 19, 2014
Revision: A01-001