W9812G6IH Datasheet, PDF (14/42 Pages) Winbond – high-speed synchronous dynamic random access memory (SDRAM)

W9812G6IH
9.4 DC Characteristics
(VDD = 3.3V ± 0.3V, TA = 0 to 70°C for -5/-6/-6C/-75, TA= -40 to 85°C for -6I)
PARAMETER
SYM.
MAX.
UNIT NOTES
-5 -6/-6C/-6I -75
Operating Current
t_CK = min., t_RC = min.
1 Bank operation
IDD1
110
100
85
3
Active precharge command
cycling without burst operation
Standby Current
tCK = min., CS = VIH
CKE = VIH
IDD2
40
30
30
3
VIH/L = VIH (min.)/VIL (max.)
CKE = VIL
Bank: Inactive state
IDD2P
2
2
2
3
(Power Down Mode)
Standby Current
CLK = VIL, CS = VIH
VIH/L=VIH (min.)/VIL (max.)
CKE = VIH
IDD2S
15
15
15
CKE = VIL
Bank: Inactive state
IDD2PS
2
2
2
(Power Down Mode)
mA
No Operating Current
t_CK = min., CS = VIH(min)
CKE = VIH
IDD3
70
65
60
CKE = VIL
Bank: Active state (4 Banks)
IDD3P
15
15
15
(Power Down Mode)
Burst Operating Current
t_CK = min.
Read/ Write command cycling
IDD4
140
120
100
3, 4
Auto Refresh Current
t_CK = min.
Auto refresh command cycling
IDD5
210
200
190
3
Self Refresh Current
Self Refresh Mode
CKE = 0.2V
IDD6
2
2
2
PARAMETER
Input Leakage Current
(0V ≤ VIN ≤ VDD, all other pins not under test = 0V)
Output Leakage Current
(Output disable , 0V ≤ VOUT ≤ VDDQ)
LVTTL Output ^″H^″ Level Voltage
(IOUT = -2 mA)
LVTTL Output ^″L^″ Level Voltage
(IOUT = 2 mA )
SYMBOL
II(L)
IO(L)
VOH
VOL
MIN.
-5
-5
2.4
-
MAX.
5
5
-
0.4
UNIT
µA
NOTES
µA
V
V
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Publication Release Date:Jun. 05, 2008
Revision A03