W9812G6IH Datasheet, PDF (13/42 Pages) Winbond – high-speed synchronous dynamic random access memory (SDRAM)

W9812G6IH
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER
Input/Output Voltage
Power Supply Voltage
Operating Temperature for -5/-6/-6C/-75
Operating Temperature for -6I
Storage Temperature
Soldering Temperature (10s)
Power Dissipation
Short Circuit Output Current
SYMBOL
VIN, VOUT
VDD, VDDQ
TOPR
TOPR
TSTG
TSOLDER
PD
IOUT
RATING
-0.3 ~ VDD + 0.3
-0.3 ~ 4.6
0 ~ 70
0 ~ 70
-55 ~ 150
260
1
50
UNIT
V
V
°C
°C
°C
°C
W
mA
NOTES
1
1
1
1
1
1
1
1
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
9.2 Recommended DC Operating Conditions
(TA = 0 to 70°C for -5/-6/-6C/-75, TA= -40 to 85°C for -6I)
PARAMETER
SYM. MIN.
Power Supply Voltage
Power Supply Voltage (for I/O Buffer)
Input High Voltage
Input Low Voltage
VDD
3.0
VDDQ
3.0
VIH
2.0
VIL
-0.3
Note: VIH(max) = VDD/ VDDQ+1.5V for pulse width < 5 nS
VIL(min) = VSS/ VSSQ-1.5V for pulse width < 5 nS
TYP.
3.3
3.3
-
-
MAX.
3.6
3.6
VDD + 0.3
0.8
UNIT
V
V
V
V
NOTES
2
2
2
2
9.3 Capacitance
(VDD = 3.3V, f = 1 MHz, TA = 25°C)
PARAMETER
Input Capacitance
(A0 to A11, BS0, BS1, CS , RAS , CAS , WE , DQM,
CKE)
Input Capacitance (CLK)
Input/Output capacitance
Note: These parameters are periodically sampled and not 100% tested.
SYMBOL
CI
CCLK
CIO
MIN.
-
-
-
MAX.
3.8
3.5
6.5
UNIT
pf
pf
pf
Publication Release Date:Jun. 05, 2008
- 13
-Revision A03