VS-EMF050J60U Datasheet, PDF (9/17 Pages) Vishay Siliconix – 3-Levels Half Bridge Inverter Stage, 60 A, 57 A

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10
VS-EMF050J60U
Vishay Semiconductors
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
0.01
D = 0.02
D = 0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
93494_17
t₁ - Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance Z_thJC Characteristics (D5 - D6 Antiparallel Diode)
100
90 ^{VGE = 15 V}
80
70
60
T_J = 150 °C
50
40
T_J = 125 °C
30
20
T_J = 25 °C
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
93494_18
V_CE (V)
Fig. 18 - Typical Q2 - Q3 IGBT Output Characteristics
100
90 ^TJ ^{= 125 °C V}GE ^{= 9 V}
80
V_GE = 12 V
V_GE = 15 V
70
V_GE = 18 V
60
50
40
30
20
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
93494_19
V_CE (V)
Fig. 19 - Typical Q2 - Q3 IGBT Output Characteristics
160
140
120
DC
100
80
60
40
20
0
0
20
40
60
80
100
93494_20
I_C - Continuous Collector Current (A)
Fig. 20 - Maximum DC Q2 - Q3 IGBT Collector Current vs.
Case Temperature per Junction
4.0
V_GE = 15 V
3.5
100 A
3.0
2.5
50 A
2.0
27 A
1.5
1.0
10
60
110
160
93494_21
T_J (°C)
Fig. 21 - Typical Q2 - Q3 IGBT Collector to Emitter Voltage vs.
Junction Temperature
Revision: 12-Jun-15
9
Document Number: 93494
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