VS-EMF050J60U Datasheet, PDF (3/17 Pages) Vishay Siliconix – 3-Levels Half Bridge Inverter Stage, 60 A, 57 A

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VS-EMF050J60U
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Q2 - Q3 IGBT
Collector to emitter breakdown voltage
Temperature coefficient of breakdown
voltage
BV_CES
BV_CES/T_J
V_GE = 0 V, I_C = 500 μA
V_GE = 0 V, I_C = 500 μA (25 °C to 125 °C)
V_GE = 15 V, I_C = 27 A
Collector to emitter voltage
V_CE(ON)
V_GE = 15 V, I_C = 50 A
V_GE = 15 V, I_C = 27 A, T_J = 125 °C
V_GE = 15 V, I_C = 50 A, T_J = 125 °C
Gate threshold voltage
Temperature coefficient of threshold
voltage
V_GE(th)
V_GE(th)/T_J
V_CE = V_GE, I_C = 250 μA
V_CE = V_GE, I_C = 1 mA (25 °C to 125 °C)
Forward transconductance
Transfer characteristics
Zero gate voltage collector current
Gate to emitter leakage current
D1 - D2 CLAMPING DIODE
g_fe
V_CE = 20 V, I_C = 50 A
V_GE
V_CE = 20 V, I_C = 50 A
V_GE = 0 V, V_CE = 900 V
I_CES
V_GE = 0 V, V_CE = 900 V, T_J = 125 °C
I_GES
V_GE = ± 20 V, V_CE = 0 V
Cathode to anode blocking voltage
Forward voltage drop
Reverse leakage current
V_BR
I_R = 100 μA
I_F = 30 A
V_FM
I_F = 30 A, T_J = 125 °C
V_R = 600 V
I_RM
V_R = 600 V, T_J = 125 °C
D3 - D4 AP DIODE
Forward voltage drop
I_F = 50 A
V_FM
I_F = 50 A T_J = 125 °C
D5 - D6 AP DIODE
Forward voltage drop
I_F = 30 A
V_FM
I_F = 30 A T_J = 125 °C
MIN.
900
-
-
-
-
-
2.8
-
-
-
-
-
-
600
-
-
-
-
-
-
-
-
TYP.
-
-8.5
2.45
2.73
2
2.43
4.5
-11.7
68
6.9
0.006
1.4
-
-
1.84
1.37
0.002
0.9
2.7
2.8
1.93
1.48
MAX. UNITS
-
V
-
V/°C
2.8
3.2
2.35
V
2.9
6.3
-
mV/°C
-
s
-
V
0.38
mA
3
± 200 nA
-
2.12
V
1.65
0.1
mA
6
3.2
V
3.3
2.37
V
1.9
Revision: 12-Jun-15
3
Document Number: 93494
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