VS-EMF050J60U Datasheet, PDF (2/17 Pages) Vishay Siliconix – 3-Levels Half Bridge Inverter Stage, 60 A, 57 A

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VS-EMF050J60U
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
D1 - D2 CLAMPING DIODE
Repetitive peak reverse voltage
Single pulse forward current
Diode continuous forward current
Power dissipation
D3 - D4 AP DIODE
V_RRM
I_FSM
I_F
P_D
10 ms sine or 6 ms rectangular pulse, T_J = 25 °C
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
Single pulse forward current
Diode continuous forward current
Power dissipation
D5 - D6 AP DIODE
I_FSM
10 ms sine or 6 ms rectangular pulse, T_J = 25 °C
T_C = 25 °C
I_F
T_C = 80 °C
T_C = 25 °C
P_D
T_C = 80 °C
Single pulse forward current
I_FSM
10 ms sine or 6 ms rectangular pulse, T_J = 25 °C
Diode continuous forward current
T_C = 25 °C
I_F
T_C = 80 °C
Power dissipation
T_C = 25 °C
P_D
T_C = 80 °C
Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(1) _{VCC = 400 V, VGE = 15 V, L = 500 μH, Rg = 22 , TJ = 150 °C}
(2) _{VCC = 720 V, VGE = 15 V, L = 500 μH, Rg = 22 , TJ = 150 °Cï€} 
MAX.
600
270
68
46
150
84
280
53
36
176
99
220
46
31
96
54
UNITS
V
A
W
A
W
A
A
W
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Q1 - Q4 IGBT
Collector to emitter breakdown voltage
Temperature coefficient of breakdown
voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
Forward transconductance
Transfer characteristics
Zero gate voltage collector current
Gate to emitter leakage current
BV_CES
BV_CES/T_J
V_CE(ON)
V_GE(th)
V_GE(th)/T_J
g_fe
V_GE
I_CES
I_GES
V_GE = 0 V, I_C = 500 μA
V_GE = 0 V, I_C = 500 μA (25 °C to 125 °C)
V_GE = 15 V, I_C = 27 A
V_GE = 15 V, I_C = 50 A
V_GE = 15 V, I_C = 27 A, T_J = 125 °C
V_GE = 15 V, I_C = 50 A, T_J = 125 °C
V_CE = V_GE, I_C = 250 μA
V_CE = V_GE, I_C = 1 mA (25 °C to 125 °C)
V_CE = 20 V, I_C = 50 A
V_CE = 20 V, I_C = 50 A
V_GE = 0 V, V_CE = 600 V
V_GE = 0 V, V_CE = 600 V, T_J = 125 °C
V_GE = ± 20 V, V_CE = 0 V
MIN.
600
-
-
-
-
-
2.9
-
-
-
-
-
-
TYP.
-
0.1
1.44
1.8
1.7
2.2
3.9
-10
95
5.9
0.003
0.170
-
MAX. UNITS
-
V
-
V/°C
1.75
2.1
2.05
V
2.5
5.3
-
mV/°C
-
s
-
V
0.1
mA
3
± 200 nA
Revision: 12-Jun-15
2
Document Number: 93494
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