VS-EMF050J60U Datasheet, PDF (7/17 Pages) Vishay Siliconix – 3-Levels Half Bridge Inverter Stage, 60 A, 57 A

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1000
100
10
1
0.1
0.01
1
10
100
1000
93494_07
V_CE (V)
Fig. 7 - Q1 - Q4 IGBT Reverse Bias SOA
T_J = 150 °C, V_GE = 15 V, R_g = 22 
1
0.1
0.01
0.001
125 °C
25 °C
0.0001
100
200
300
400
500
600
93494_08
V_CES (V)
Fig. 8 - Typical Q1 - Q4 IGBT Zero Gate Voltage Collector Current
100
90
80
70
60
50
40
T_J = 125 °C
30
T_J = 25 °C
20
10
0
0
0.5 1.0 1.5 2.0 2.5 3.0
93494_09
V_FM (V)
Fig. 9 - Typical D5 - D6 Antiparallel Diode Forward Characteristics
VS-EMF050J60U
Vishay Semiconductors
160
140
120
100
DC
80
60
40
20
0
0 5 10 15 20 25 30 35 40 45 50
93494_10
I_F - Continuous Forward Current (A)
Fig. 10 - Maximum DC D5 - D6 Antiparallel Diode
Forward Current vs. Case Temperature per Junction
1.8
1.6
1.4
1.2
1.0
0.8
E_off
0.6
0.4
0.2
E_on
0
10 20 30 40 50 60 70 80 90
93494_11
I_C (A)
Fig. 11 - Typical Q1 - Q4 IGBT Energy Loss vs. I_C
(with Freewheeling D1 - D2 Clamping Diode)
V_CC = 400 V, R_g = 4.7 , V_GE = 15 V, L = 500 μH
1000
100
t_d(off)
t_f
t_d(on)
t_r
10
10 20 30 40 50 60 70 80 90
93494_12
I_C (A)
Fig. 12 - Typical Q1 - Q4 IGBT Switching Time vs. I_C
(with Freewheeling D1 - D2 Clamping Diode)
T_J = 125 °C, V_CC = 400 V, R_g = 4.7 , V_GE = 15 V, L = 500 μH
Revision: 12-Jun-15
7
Document Number: 93494
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