VS-EMF050J60U Datasheet, PDF (5/17 Pages) Vishay Siliconix – 3-Levels Half Bridge Inverter Stage, 60 A, 57 A

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VS-EMF050J60U
Vishay Semiconductors
SWITCHING CHARACTERISTICS (T_J = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
D1 - D2 CLAMPING DIODE
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
D3 - D4 AP DIODE
t_rr
V_R = 200 V
I_rr
I_F = 30 A
Q_rr
dl/dt = 500 A/μs
t_rr
V_R = 200 V
I_rr
I_F = 30 A
Q_rr
dl/dt = 500 A/μs, T_J = 125 °C
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
D5 - D6 AP DIODE
t_rr
V_R = 400 V
I_rr
I_F = 50 A
Q_rr
dl/dt = 500 A/μs
t_rr
V_R = 400 V
I_rr
I_F = 50 A
Q_rr
dl/dt = 500 A/μs, T_J = 125 °C
Diode reverse recovery time
t_rr
Diode peak reverse current
I_rr
Diode recovery charge
Q_rr
Diode reverse recovery time
t_rr
Diode peak reverse current
I_rr
Diode recovery charge
Q_rr
Note
(1) _{Energy losses include “tail” and diode reverse recovery.}
V_R = 200 V
I_F = 30 A
dl/dt = 500 A/μs
V_R = 200 V
I_F = 30 A
dl/dt = 500 A/μs, T_J = 125 °C
MIN. TYP. MAX. UNITS
-
50
80
ns
-
7.5
11
A
-
185 440
nC
-
107 147
ns
-
18
22
A
-
955 1620
nC
-
114 150
ns
-
21
25
A
-
1200 1875
nC
-
170 210
ns
-
28
32
A
-
2160 3360
nC
-
46
77
ns
-
7
11
A
-
161 423
nC
-
106 138
ns
-
17
22
A
-
900 1518
nC
THERMISTOR ELECTRICAL CHARACTERISTICS (T_J = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Resistance
R₂₅
R₁₀₀
T_J = 100 °C
4500 5000
468 493
B value
B
T_J = 25 °C/T_J = 50 °C
3206 3375
MAX. UNITS
5500

518
3544 K
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Q1 - Q4 IGBT - Junction to case thermal resistance (per switch)
Q2 - Q3 IGBT - Junction to case thermal resistance (per switch)
D1 - D2 Clamping diode - Junction to case thermal resistance (per diode)
D3 - D4 AP diode - Junction to case thermal resistance (per diode)
D5 - D6 AP diode - Junction to case thermal resistance (per diode)
Q1 - Q4 IGBT - Case to sink thermal resistance (per switch)
Q2 - Q3 IGBT - Case to sink thermal resistance (per switch)
D1 - D2 Clamping diode - Case to sink thermal resistance (per diode)
D3 - D4 AP diode - Case to sink thermal resistance (per diode)
D5 - D6 AP diode - Case to sink thermal resistance (per diode)
Mounting torque (M4)
Weight
Note
(1) _{Mounting surface flat, smooth, and greased}
SYMBOL
R_thJC
R_thCS ⁽¹⁾
MIN.
-
-
-
-
-
-
-
-
-
-
2
-
TYP.
-
-
-
-
-
0.31
0.31
0.51
0.41
0.62
-
39
MAX.
0.37
0.37
0.83
0.71
1.3
-
-
-
-
-
3
-
UNITS
°C/W
Nm
g
Revision: 12-Jun-15
5
Document Number: 93494
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