VS-EMF050J60U Datasheet, PDF (6/17 Pages) Vishay Siliconix – 3-Levels Half Bridge Inverter Stage, 60 A, 57 A

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100
90 ^VGE ^{= 15 V}
80
T_J = 125 °C
70
60
T_J = 150 °C
50
T_J = 25 °C
40
30
20
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
93494_01
V_CE (V)
Fig. 1 - Typical Q1 - Q4 IGBT Output Characteristics
100
90 ^TJ ^{= 125 °C}
80
70
60
V_GE = 8 V
V_GE = 10 V
50
V_GE = 12 V
40
V_GE = 15 V
V_GE = 18 V
30
20
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
93494_02
V_CE (V)
Fig. 2 - Typical Q1 - Q4 IGBT Output Characteristics
160
140
120
DC
100
80
60
40
20
0
0
20
40
60
80
100
93494_03
I_C - Continuous Collector Current (A)
Fig. 3 - Maximum DC Q1 - Q4 IGBT Collector Current vs.
Case Temperature per Junction
VS-EMF050J60U
Vishay Semiconductors
4.0
V_GE = 15 V
3.5
3.0
100 A
2.5
50 A
2.0
1.5
27 A
1.0
0.5
10
60
110
160
93494_04
T_J (°C)
Fig. 4 - Typical Q1 - Q4 IGBT Collector to Emitter Voltage vs.
Junction Temperature
100
90 ^VCE ^{= 20 V}
80
70
60
50
T_J = 125 °C
40
T_J = 25 °C
30
20
10
0
3
4
5
6
7
8
93494_05
V_GE (V)
Fig. 5 - Typical Q1 - Q4 IGBT Transfer Characteristics
4.5
T_J = 25 °C
4.0
3.5
3.0
T_J = 125 °C
2.5
2.0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
93494_06
I_C (mA)
Fig. 6 - Typical Q1 - Q4 IGBT Gate Threshold Voltage
Revision: 12-Jun-15
6
Document Number: 93494
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