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VS-EMF050J60U Datasheet, PDF (11/17 Pages) Vishay Siliconix – 3-Levels Half Bridge Inverter Stage, 60 A, 57 A
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VS-EMF050J60U
Vishay Semiconductors
4.2
3.8
3.4
3.0
2.6
Eoff
2.2
1.8
1.4
1.0
Eon
0.6
0.2
10 20 30 40 50 60 70 80 90
93494_28
IC (A)
Fig. 28 - Typical Q2 - Q3 IGBT Energy Loss vs. IC
(with Freewheeling D2 - D3 AP Diode)
VCC = 720 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
280
260
240
220
125 °C
200
180
160
140
25 °C
120
100
100
200
300
400
500
93494_30
dIF/dt (A/μs)
Fig. 30 - Typical D3 - D4 Antiparallel Diode Reverse
Recovery Time vs. dIF/dt
VR = 400 V, IF = 50 A
1000
100
tf
td(on)
td(off)
tr
10
10 20 30 40 50 60 70 80 90
93494_29
IC (A)
Fig. 29 - Typical Q2 - Q3 IGBT Switching Time vs. IC
(with Freewheeling D2 - D3 AP Diode)
TJ = 125 °C, VCC = 720 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
32
28
24
20
125 °C
16
25 °C
12
8
4
100
200
300
400
500
93494_31
dIF/dt (A/μs)
Fig. 31 - Typical D3 - D4 Antiparallel Diode Reverse
Recovery Current vs. dIF/dt
VR = 400 V, IF = 50 A
2500
2250
2000
125 °C
1750
1500
1250
1000
750
25 °C
500
100
200
300
400
500
93494_32
dIF/dt (A/μs)
Fig. 32 - Typical D3 - D4 Antiparallel Diode Reverse Recovery Charge vs. dIF/dt
VR = 400 V, IF = 50 A
Revision: 12-Jun-15
11
Document Number: 93494
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