VS-EMF050J60U Datasheet, PDF (10/17 Pages) Vishay Siliconix – 3-Levels Half Bridge Inverter Stage, 60 A, 57 A

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100
90 V_CE = 20 V
80
70
60
50
T_J = 125 °C
40
T_J = 25 °C
30
20
10
0
4
5
6
7
8
9
93494_22
V_GE (V)
Fig. 22 - Typical Q1 - Q4 IGBT Transfer Characteristics
5.5
5.0
T_J = 25 °C
4.5
4.0
3.5
3.0
T_J = 125 °C
2.5
2.0
1.5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
93494_23
I_C (mA)
Fig. 23 - Typical Q2 - Q3 IGBT Gate Threshold Voltage
1000
100
10
1
0.1
0.01
1
10
100
1000
93494_24
V_CE (V)
Fig. 24 - Q2 - Q3 IGBT Reverse Bias SOA
T_J = 150 °C, V_GE = 15 V, R_g = 22 
VS-EMF050J60U
Vishay Semiconductors
10
125 °C
1
0.1
0.01
0.001
25 °C
0.0001
100 200 300 400 500 600 700 800 900
93494_25
V_CES (V)
Fig. 25 - Typical Q2 - Q3 IGBT Zero Gate Voltage Collector Current
100
90
80
T_J = 25 °C
70
60
T_J = 125 °C
50
40
30
20
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
93494_26
V_FM (V)
Fig. 26 - Typical D3 - D4 Antiparallel Diode Forward Characteristics
160
140
120
100
DC
80
60
40
20
0
0 5 10 15 20 25 30 35 40 45 50 55 60
93494_27
I_F - Continuous Forward Current (A)
Fig. 27 - Maximum DC D3 - D4 Antiparallel Diode
Forward Current vs. Case Temperature per Junction
Revision: 12-Jun-15
10
Document Number: 93494
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