VS-EMF050J60U Datasheet, PDF (13/17 Pages) Vishay Siliconix – 3-Levels Half Bridge Inverter Stage, 60 A, 57 A

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10
1
125 °C
0.1
0.01
0.001
25 °C
0.0001
100
200
300
400
500
600
93494_37
V_R (V)
Fig. 37 - Typical D1 - D2 Clamping Diode
Reverse Leakage Current
160
140
125 °C
120
100
80
25 °C
60
40
100
200
300
400
500
93494_38
dI_F/dt (A/μs)
Fig. 38 - Typical D1 - D2 Clamping Diode Reverse
Recovery Time vs. dI_F/dt
V_R = 200 V, I_F = 30 A
10
VS-EMF050J60U
Vishay Semiconductors
21
19
17
15
125 °C
13
11
9
7
25 °C
5
3
1
100
200
300
400
500
93494_39
dI_F/dt (A/μs)
Fig. 39 - Typical D1 - D2 Clamping Diode Reverse
Recovery Current vs. dI_F/dt
V_R = 200 V, I_F = 30 A
1000
900
800
125 °C
700
600
500
400
300
200
25 °C
100
0
100
200
300
400
500
93494_40
dI_F/dt (A/μs)
Fig. 40 - Typical D1 - D2 Clamping Diode Reverse
Recovery Charge vs. dI_F/dt
V_R = 200 V, I_F = 30 A
1
0.1
D = 0.50
D = 0.20
D = 0.10
0.01
D = 0.05
D = 0.02
D = 0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
93494_41
t₁ - Rectangular Pulse Duration (s)
Fig. 41 - Maximum Thermal Impedance Z_thJC Characteristics (D1 - D2 Clamping Diode)
Revision: 12-Jun-15
13
Document Number: 93494
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