SI4972DY Datasheet, PDF (9/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.20
T_J = 150 °C
10
0.16
1
T_J = 25 °C
0.12
Si4972DY
Vishay Siliconix
I_D = 4.5 A
0.1
0.01
0.001
0.00
0.2
0.4
0.6
0.8
1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage (Ch 2)
0.6
0.3
I_D = 250 µA
0.08
T_A = 125 °C
0.04
0.00
0
T_A = 25 °C
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Temperature (Ch 2)
30
24
0.0
18
- 0.3
- 0.6
I_D = 5 mA
12
6
- 0.9
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage (Ch 2)
100
Limited by R_DS(on)*
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient (Ch 2)
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
1
1 ms
10 ms
100 ms
0.1
T_A = 25 °C
1s
Single Pulse
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient (Ch 2)
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