SI4972DY Datasheet, PDF (1/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET
Si4972DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
I_D (A)^{a Q}g ^(Typ.)
Channel 1
30
0.0145 at V_GS = 10 V 10.8
8.3
0.0195 at V_GS = 4.5 V 9.3
Channel 2
30
0.0265 at V_GS = 10 V 7.2
4
0.036 at V_GS = 4.5 V 6.2
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• Logic DC/DC for Notebook PC
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4972DY-T1-E3 (Lead (Pb)-free)
Si4972DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Channel 1
Channel 2
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
T_C = 25 °C
10.8
7.2
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
I_DM
8.7
8.7^b,c
6.9^b,c
20
5.7
6.4^b,c
5.1^b,c
20
A
Source-Drain Current Diode Current
Pulsed Source-Drain Current
T_C = 25 °C
T_A = 25 °C
I_S
I_SM
2.5
1.6^b,c
20
2.1
1.6^b,c
20
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
E_AS
15
11
6
1.8
mJ
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
3.1
2.5
T_C = 70 °C
T_A = 25 °C
P_D
2.1
2.0^b,c
1.6
2.0^b,c
W
T_A = 70 °C
1.25^b,c
1.25^b,c
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Channel 1
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady
Symbol
R_thJA
R_thJF
Typical
52
32
Maximum
62.5
40
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W (Ch 1) and 120 °C/W (Ch 2).
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
Channel 2
Typical Maximum
55
62.5
40
50
Unit
°C/W
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