SI4972DY Datasheet, PDF (5/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
T_J = 150 °C
10
0.08
1
T_J = 25 °C
0.06
Si4972DY
Vishay Siliconix
I_D = 6 A
0.1
0.01
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage (Ch 1)
0.6
I_D = 250 µA
0.3
0.0 ^{ID = 5 mA}
0.04
T_A = 125 °C
0.02
T_A = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source (Ch 1)
50
40
30
- 0.3
20
- 0.6
10
- 0.9
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage (Ch 1)
100
Limited by R_DS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient (Ch 1)
10
1 ms
1
10 ms
100 ms
0.1
T_A = 25 °C
Single Pulse
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient (Ch 1)
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
www.vishay.com
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