SI4972DY Datasheet, PDF (10/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si4972DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
4.0
3.2
6
2.4
4
1.6
2
0.8
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating* (Ch 2)
1.5
0.0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Foot (Ch 2)
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient (Ch 2)
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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10
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09