SI4972DY Datasheet, PDF (11/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
Si4972DY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Notes:
P _DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 120 C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-3
10^-2
10^-1
1
Pulse Time (s)
10
100
Normalized Thermal Transient Impedance, Junction-to-Ambient (Ch 2)
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case (Ch 2)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73849.
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
www.vishay.com
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