SI4972DY Datasheet, PDF (2/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si4972DY
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_DS
ΔV_DS/T_J
V_GS = 0 V, I_D = 250 µA
V_GS = 0 V, I_D = 250 µA
I_D = 250 µA
I_D = 250 µA
V_GS(th) Temperature Coefficient
Gate Threshold Voltage
ΔV_GS(th)/T_J
V_GS(th)
I_D = 250 µA
I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State
Resistance^b
Forward Transconductance^b
Dynamic^a
I_DSS
I_D(on)
R_DS(on)
g_fs
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55 °C
V_DS = 30 V, V_GS = 0 V, T_J = 55 °C
V_DS = 5 V, V_GS = 10 V
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 6 A
V_GS = 10 V, I_D = 4.5 A
V_GS = 4.5 V, I_D = 5.6 A
V_GS = 4.5 V, I_D = 4 A
V_DS = 15 V, I_D = 6 A
V_DS = 15 V, I_D = 4.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
Channel 1
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Channel 2
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V_DS = 15 V, V_GS = 10 V, I_D = 5 A
Q_g
V_DS = 15 V, V_GS = 10 V, I_D = 5 A
Channel 1
V_DS = 15 V, V_GS = 4.5 V, I_D = 5 A
Q_gs
Channel 2
Q_gd
V_DS = 15 V, V_GS = 4.5 V, I_D = 5 A
Gate Resistance
R_g
f = 1 MHz
Min. Typ.^a Max.
Unit
Ch 1 ₃₀
Ch 2 30
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1 _1.5
Ch 2 _1.5
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1 ₁₀
Ch 2 10
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
35
35
- 6.5
- 6.5
0.012
0.022
0.016
0.030
27
20
3.0
3.0
100
100
1
1
10
10
0.0145
0.0265
0.0195
0.036
V
mV/°C
V
nA
µA
A
Ω
S
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
1080
515
170
91
pF
72
38
18.5
28
9.6
15
8.3
13
4
6
nC
3.9
1.9
2.7
1.3
2.5
3.8
2.9
4.4
Ω
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2
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09