SI4972DY Datasheet, PDF (8/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si4972DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
1.5
V_GS = 10 thru 5 V
24
1.2
18
0.9
4V
T_C = 125 °C
12
0.6
6
0
0.0
0.5
1.0
1.5
2.0
2.5
V_GS - Drain-to-Source Voltage (V)
Output Characteristics (Ch 2)
0.07
0.3
25 °C
- 55 °C
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics (Ch 2)
650
0.06
0.05
V_GS = 4.5 V
520
C_iss
390
0.04
260
0.03
V_GS = 10 V
0.02
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current Gate Voltage (Ch 2)
10
I_D = 5 A
8
V_DS = 10 V
6
V_DS = 15 V
4
V_DS = 20 V
2
130
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance (Ch 2)
1.8
I_D = 4.5 A
1.5
V_GS = 10 V
1.2
V_GS = 4.5 V
0.9
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge (Ch 2)
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature (Ch 2)
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8
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09