SI4972DY Datasheet, PDF (4/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si4972DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
2.0
V_GS = 10 V thru 4 V
24
1.6
18
12
6
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics (Ch 1)
0.020
1.2
0.8
T_C = 125 °C
25 °C
0.4
- 55 °C
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics (Ch 1)
1500
0.018
0.016
V_GS = 4.5 V
1200
C_iss
900
0.014
0.012
V_GS = 10 V
0.010
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage (Ch 1)
10
I_D = 5 A
8
V_DS = 10 V
6
V_DS = 15 V
4
V_DS = 20 V
2
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge (Ch 1)
600
300
0 ^Crss
0
6
C_oss
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance (Ch 1)
1.6
I_D = 6 A
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature (Ch 1)
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4
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09