SI4972DY Datasheet, PDF (3/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si4972DY
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min. Typ.^a Max.
Unit
Dynamic^a
Turn-On Delay Time
Rise Time
t_d(on)
t_r
Channel 1
V_DD = 15 V, R_L = 3 Ω
I_D ≅ 5 A, V_GEN = 10 V, R_g = 1 Ω
Ch 1
Ch 2
Ch 1
Ch 2
12
18
10
15
55
83
60
90
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
t_d(off)
t_f
t_d(on)
t_r
Channel 2
V_DD = 15 V, R_L = 3 Ω
I_D ≅ 5 A, V_GEN = 10 V, R_g = 1 Ω
Channel 1
V_DD = 15 V, R_L = 3 Ω
I_D ≅ 5 A, V_GEN = 4.5 V, R_g = 1 Ω
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
30
45
22
33
7
11
6
9
ns
120
180
108
162
150
225
130
195
Turn-Off Delay Time
Fall Time
t_d(off)
t_f
Channel 2
V_DD = 15 V, R_L = 3 Ω
I_D ≅ 5 A, V_GEN = 4.5 V, R_g = 16 Ω
Ch 1
Ch 2
Ch 1
Ch 2
29
44
19
29
13
20
26
39
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode
Current
I_S
Pulse Diode Forward Current^a
I_SM
T_C = 25 °C
Ch 1
Ch 2
Ch 1
Ch 2
2.5
2.1
A
20
20
Body Diode Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
V_SD
I_S = 1.6 A
I_S = 1.6 A
Ch 1
Ch 2
Ch 1
t_rr
Ch 2
Channel 1
Ch 1
Q_rr
I_F = 2 A, dI/dt = 100 A/µs, T_J = 25 °C _{Ch 2}
0.77
1.2
0.79
1.2
V
21
42
18
36
ns
15
30
11
22
nC
Reverse Recovery Fall Time
t_a
Channel 2
I_F = 2 A, dI/dt = 100 A/µs, T_J = 25 °C
Ch 1
Ch 2
13
11
Ch 1
8
ns
Reverse Recovery Rise Time
t_b
Ch 2
7
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
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