 English |
|
|
|
|
|
|
|
| 10-PZ12NMA027ME-M340F63Y Datasheet, PDF (9/28 Pages) Vincotech – Ultra Low Inductance with Integrated DC-capacitors | |||
| |||
| ◁ |
10-PZ12NMA027ME-M340F63Y
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of drain current
dI0/dt,dIrec/dt = f(ID)
20000
18000
dIrec/dt T
di0/dtT
16000
14000
12000
10000
8000
6000
4000
2000
0
0
20
40
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
350
V
+16/-5
V
4
â¦
Half Bridge
half bridge MOSFET and neutral point FWD
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of MOSFET turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
18000
16000
dIrec/dt T
di0/dtT
14000
12000
10000
8000
6000
4000
2000
60
80
I D (A) 100
0
0
4
8
12
At
Tj =
VR =
IF =
VGE =
25/125 °C
350
V
44
A
+16/-5
V
Figure 19
MOSFET transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
MOSFET
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
FWD
16
R gon ( â¦) 20
FWD
100
10-1
10-1
D = 0,5
D = 0,5
10-2
0,2
0,2
0,1
0,1
0,05
10-2
0,05
0,02
0,02
0,01
0,01
0,005
0,005
0.000
0.000
10-3
10-3
10-5
10-4
10-3
10-2
10-1
100 t p (s)
101
10-5
10-4
10-3
10-2
10-1
100
t p (s) 101
At
D=
RthJH =
tp / T
0,71
K/W
At
D=
RthJH =
tp / T
1,63
K/W
MOSFET thermal model values
FWD thermal model values
R (K/W)
0,12
0,36
0,09
0,06
0,08
Tau (s)
9,2E-01
1,3E-01
4,4E-02
6,1E-03
7,1E-04
R (K/W)
0,08
0,18
0,85
0,29
0,17
0,06
Tau (s)
3,0E+00
5,1E-01
8,5E-02
2,6E-02
3,9E-03
8,3E-04
copyright by Vincotech
9
Revision: 1.1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese