10-PZ12NMA027ME-M340F63Y Datasheet, PDF (6/28 Pages) Vincotech – Ultra Low Inductance with Integrated DC-capacitors

10-PZ12NMA027ME-M340F63Y
Figure 5
Typical switching energy losses
as a function of drain current
E = f(I_D)
0,30
0,25
0,20
0,15
0,10
0,05
Half Bridge
half bridge MOSFET and neutral point FWD
MOSFET
E_{off Low T}
E_{off High T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
0,5
0,4
0,3
E_{on Low T}
E_{on High T}
0,2
0,1
0,00
0,0
0
20
40
60
80
I D (A) ¹⁰⁰
0
4
8
12
With an inductive load at
T_j =
V_DS =
V_GS =
R_gon =
R_goff =
25/125 °C
350
V
+16/-5
V
4
Ω
4
Ω
With an inductive load at
T_j =
V_DS =
V_GS =
I_D =
25/125 °C
350
V
+16/-5
V
44
A
Figure 7
Typical reverse recovery energy loss
as a function of drain current
E_rec = f(I_D)
0,06
0,05
0,04
0,03
0,02
0,01
0
0
20
40
60
With an inductive load at
T_j =
25/125 °C
V_DS =
350
V
V_GS =
+16/-5
V
R_gon =
4
Ω
FWD
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,05
E_{rec Low T}
E_{rec High T}
0,04
0,03
0,02
0,01
0
80
I D (A) ¹⁰⁰
0
4
8
12
With an inductive load at
T_j =
25/125 °C
V_DS =
350
V
V_GS =
+16/-5
V
I_D =
44
A
MOSFET
E_{on Low T}
E_{on High T}
E_{off Low T}
E_{off High T}
16
R G ( Ω) ²⁰
FWD
E_{rec Low T}
E_{rec High T}
16
R G ( Ω) ²⁰
copyright by Vincotech
6
Revision: 1.1