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| 10-PZ12NMA027ME-M340F63Y Datasheet, PDF (3/28 Pages) Vincotech – Ultra Low Inductance with Integrated DC-capacitors | |||
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10-PZ12NMA027ME-M340F63Y
Parameter
Half Bridge MOSFET ( T1 , T4 )
Drain-source on-state resistance
Gate threshold voltage
Total Gate Reverse Leakage
Zero Gate Voltage Drain Current
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Total gate charge *
Gate to source charge
Gate to drain charge
Input capacitance *
Output capacitance
Reverse transfer capacitance
Thermal resistance chip to heatsink per chip
Neutral Point FWD ( D7 , D8 )
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Symbol
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Value
Min
Typ
Max
Unit
Rds(on)
V(GS)th VDS=VGS
IGSS
IDSS
td(on)
tr
td(off)
tf
Rgoff=4 â¦
Rgon=4 â¦
Eon
Eoff
Qg
Qgs
Qgd
Cies
Coss f=1MHz
Crss
20
20
0
+16/-5
0/20
0
RthJH
Phase-Change
Material
0
1200
350
800
1000
20
0,003
44
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
60
Tj=25°C
Tj=25°C
80
150
mâ¦
1,7
3,62
4,97
V
0,75
µA
300
750
µA
24
22
8
7
63
ns
68
17
13
0,13
0,11
0,09
mWs
0,08
148
pF
32
pF
54
pF
2850
240
pF
19,5
0,71
K/W
VF
24
IRRM
trr
Qrr Rgon=4 â¦
+16/-5
350
44
di(rec)max
/dt
Erec
RthJH
Phase-Change
Material
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,52
1,8
1,82
V
40
44
A
12
12
ns
0,20
0,18
µC
10399
10851
A/µs
0,03
0,02
mWs
1,63
K/W
copyright by Vincotech
3
Revision: 1.1
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