10-PZ12NMA027ME-M340F63Y Datasheet, PDF (1/28 Pages) Vincotech – Ultra Low Inductance with Integrated DC-capacitors

flow MNPC 0-SIC
Features
● Cree™ Silicon Carbide Power MOSFET
● Cree™ Silicon Carbide Power Schottky Diode
● MNPC Topology with Splitted Output
● Ultra Low Inductance with Integrated DC-capacitors
● Extremely Fast Switching with No "Tail" Current
● Unsensitivity for Cross Through Conduction
● Solderless Press-fit Mounting Technology
● Temperature sensor
Target Applications
● High efficient solar inverters
● UPS
Types
● 10-PZ12NMA027ME-M340F63Y
10-PZ12NMA027ME-M340F63Y
1200V/ 80mΩ
flow 0 12mm housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
Half Bridge MOSFET ( T1 , T4 )
Drain-source break down voltage
DC drain current
Repetitive peak drain current
Power dissipation per IGBT
Gate-source peak voltage
Maximum Junction Temperature
Neutral Point FWD ( D7 , D8 )
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
V_DSS
I_D
I_Dpulse
P_tot
V_GS
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_h=80°C
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_h=80°C
Value
Unit
1200
V
50
A
180
A
98
W
-10/+25
V
150
°C
650
V
27
A
171
A
58
W
175
°C
copyright by Vincotech
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Revision: 1.1