10-PZ12NMA027ME-M340F63Y Datasheet, PDF (7/28 Pages) Vincotech – Ultra Low Inductance with Integrated DC-capacitors

Figure 9
Typical switching times as a
function of drain current
t = f(I_D)
1,00
10-PZ12NMA027ME-M340F63Y
Half Bridge
MOSFET
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1,00
MOSFET
0,10
0,10
t_doff
t_doff
t_don
t_don
t_f
t_f
0,01
t_r
0,01
t_r
0,00
0
20
40
60
With an inductive load at
T_j =
125
°C
V_DS =
350
V
V_GS =
+16/-5
V
R_gon =
4
Ω
R_goff =
4
Ω
Figure 11
Typical reverse recovery time as a
function of drain current
t_rr = f(I_D)
0,025
t_{rr Low T}
0,020
t_{rr High T}
0,015
0,010
0,005
0,000
0
20
40
60
At
T_j =
V_DS =
V_GS =
R_gon =
25/125 °C
350
V
+16/-5
V
4
Ω
0,00
80
I D (A) ¹⁰⁰
0
4
8
12
With an inductive load at
T_j =
V_DS =
V_GS =
I_D =
125
°C
350
V
+16/-5
V
44
A
FWD
Figure 12
Typical reverse recovery time as a
function of MOSFET turn on gate resistor
t_rr = f(R_gon)
0,025
0,020
0,015
0,010
0,005
0,000
80
I D (A) ¹⁰⁰
0
4
8
12
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
350
V
44
A
+16/-5
V
16
R G ( Ω) 20
FWD
t_{rr High T}
t_{rr Low T}
16
20
R gon ( Ω)
copyright by Vincotech
7
Revision: 1.1