10-PZ12NMA027ME-M340F63Y Datasheet, PDF (14/28 Pages) Vincotech – Ultra Low Inductance with Integrated DC-capacitors

10-PZ12NMA027ME-M340F63Y
Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1
Neutral Point
neutral point IGBT and half bridge FWD
IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
0,1
0,01
0,001
0
20
40
60
With an inductive load at
T_j =
125
°C
V_CE =
350
V
V_GE =
±15
V
R_gon =
2
Ω
R_goff =
2
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,04
0,03
0,02
0,01
0,00
0
20
40
60
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
2
Ω
t_doff
0,1
t_don
t_r
0,01
t_f
0,001
80
I C (A)
100
0
2
4
6
With an inductive load at
T_j =
125
°C
V_CE =
350
V
V_GE =
±15
V
I_C =
44
A
FWD
t_{rr High T}
t_{rr Low T}
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,04
0,03
0,02
0,01
0
80
I C (A) 100
0
2
4
6
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
44
A
±15
V
IGBT
t_doff
t_don
t_f
t_r
8
R G( Ω ) ¹⁰
FWD
t_{rr High T}
t_{rr Low T}
8
R gon ( Ω) 10
copyright by Vincotech
14
Revision: 1.1