 English |
|
|
|
|
|
|
|
| 10-PZ12NMA027ME-M340F63Y Datasheet, PDF (16/28 Pages) Vincotech – Ultra Low Inductance with Integrated DC-capacitors | |||
| |||
| ◁ |
10-PZ12NMA027ME-M340F63Y
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
10000
dIrec/dt T
di0/dt T
8000
6000
4000
2000
0
0
20
40
60
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
350
V
±15
V
2
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
Neutral Point
neutral point IGBT and half bridge FWD
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
14000
12000
FWD
dIrec/dt T
dI0/dtT
10000
8000
6000
4000
2000
80
I C (A) 100
0
0
2
4
6
At
Tj =
VR =
IF =
VGE =
25/125 °C
350
V
44
A
±15
V
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
8
R gon ( â¦) 10
FWD
100
100
10-1
10-2
10-3
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,96
K/W
IGBT thermal model values
R (K/W)
0,10
0,14
0,40
0,16
0,11
Tau (s)
2,15
0,45
0,11
0,03
0,01
10-1
D = 0,5
0,2
0,1
0,05
10-2
0,02
0,01
0,005
0.000
10-3
10-1
100
t p (s) 101 10
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
2,39
K/W
FWD thermal model values
R (K/W)
0,07
0,20
1,24
0,49
0,32
Tau (s)
2,91
0,36
0,06
0,02
0,00
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 101 10
copyright by Vincotech
16
Revision: 1.1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese