10-PZ12NMA027ME-M340F63Y Datasheet, PDF (13/28 Pages) Vincotech – Ultra Low Inductance with Integrated DC-capacitors

10-PZ12NMA027ME-M340F63Y
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
0,6
Neutral Point
neutral point IGBT and half bridge FWD
IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
0,4
0,5
0,3
0,4
E_{off High T}
E_{on High T}
E_{on Low T}
0,3
E_{off Low T}
0,2
0,2
0,1
0,1
0
0
20
40
60
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
350
V
±15
V
2
Ω
2
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
0,25
80
I C (A) ¹⁰⁰
0
0
2
4
6
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
350
V
±15
V
44
A
FWD
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,1
0,2
0,08
E_{rec High T}
0,15
0,06
0,1
0,04
E_{rec Low T}
0,05
0,02
0
0
20
40
60
80
I C (A)
100
0
0
2
4
6
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
R_gon =
2
Ω
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
I_C =
44
A
IGBT
E_{on High T}
E_{off High T}
E_{on Low T}
E_{off Low T}
8 _{R G( Ω )} 10
FWD
E_{rec High T}
E_{rec Low T}
8
10
R_G (Ω)
copyright by Vincotech
13
Revision: 1.1