10-PZ12NMA027ME-M340F63Y Datasheet, PDF (8/28 Pages) Vincotech – Ultra Low Inductance with Integrated DC-capacitors

10-PZ12NMA027ME-M340F63Y
Figure 13
Typical reverse recovery charge as a
function of drain current
Q_rr = f(I_D)
0,3
0,25
0,2
0,15
0,1
0,05
0
0
20
40
60
At
At
T_j =
V_DS =
V_GS =
R_gon =
25/125 °C
350
V
+16/-5
V
4
Ω
Half Bridge
half bridge MOSFET and neutral point FWD
FWD
Figure 14
Typical reverse recovery charge as a
function of MOSFET turn on gate resistor
Q_rr = f(R_gon)
0,3
Q_{rr Low T}
Q_{rr High T}
0,25
0,2
0,15
0,1
0,05
80
I D (A) 100
0
0
4
8
12
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
350
V
44
A
+16/-5
V
Figure 15
Typical reverse recovery current as a
function of drain current
I_RRM = f(I_D)
50
40
30
20
10
0
0
20
40
60
At
T_j =
V_DS =
V_GS =
R_gon =
25/125 °C
350
V
+16/-5
V
4
Ω
FWD
I_{RRM High T}
I_{RRM Low T}
80
I D (A) ¹⁰⁰
Figure 16
Typical reverse recovery current as a
function of MOSFET turn on gate resistor
I_RRM = f(R_gon)
70
60
50
40
30
20
10
0
0
4
8
12
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
350
V
44
A
+16/-5
V
FWD
Q_{rr Low T}
Q_{rr High T}
16 _{R gon ( Ω)} 20
FWD
I_{RRM High T}
I_{RRM Low T}
16 _{R gon ( Ω)}
20
copyright by Vincotech
8
Revision: 1.1