10-FZ06NRA084FP02-P969F78 Datasheet, PDF (9/26 Pages) Vincotech – 75A parallel switch (75A and 99m MOSFET)

Buck
10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1,00
MOSFET+IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1,00
t_doff
MOSFET+IGBT
t_doff
0,10
0,01 t_f
t_r
0,00
0
20
With an inductive load at
T_j =
125
°C
V_CE =
350
V
V_GE =
±15
V
R_gon =
4
Ω
R_goff =
4
Ω
0,10
t_don
0,01
40
60
I C (A)
80
Gate on/off resistor of IGBT is fix 4Ω
MOSFET turn off delayed with 350 nS
0,00
0
20
With an inductive load at
T_j =
125
°C
V_CE =
350
V
V_GE =
±15
V
I_C =
40
A
t_don
t_r
t_f
40
60
RG(Ω )
80
Gate on/off resistor of IGBT is fix 4Ω
MOSFET turn off delayed with 350 nS
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,05
0,04
FWD
t_{rr High T}
0,03
0,02
t_{rr Low T}
0,01
0,00
0
At
T_j =
V_CE =
V_GE =
R_gon =
20
25/125 °C
350
V
±15
V
4
Ω
40
60
I C (A)
80
Gate on/off resistor of IGBT is fix 4Ω
MOSFET turn off delayed with 350 nS
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,030
0,025
FWD
t_{rr High T}
0,020
0,015
t_{rr Low T}
0,010
0,005
0,000
0
20
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
40
A
±15
V
40
60
80
R gon ( Ω )
Gate on/off resistor of IGBT is fix 4Ω
MOSFET turn off delayed with 350 nS
copyright Vincotech
9
Revision: 1