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| 10-FZ06NRA084FP02-P969F78 Datasheet, PDF (18/26 Pages) Vincotech – 75A parallel switch (75A and 99m MOSFET) | |||
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10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
Figure 17
Typical rate of fall of forward and reverse recovery current
as a function of collector current
dI0/dt,dIrec/dt = f(Ic)
14000
12000
dIrec/dt T
di0/dt T
FWD
10000
8000
6000
4000
2000
0
0
20
40
60
At
Tj =
VCE =
VGE =
Rgon =
2152/5125 °C
350
V
±15
V
4
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
80
100
I C (A)
IGBT
Figure 18
Typical rate of fall of forward and reverse recovery current
as a and reverse recovery current
dI0/dt,dIrec/dt = f(Rgon)
20000
dI0/dt T
dIrec/dt T
15000
FWD
10000
5000
0
0
5
10
At
Tj =
VR =
IF =
VGE =
1225/5125 °C
350
V
50
A
±15
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
15
R gon ( â¦)
20
FWD
100
100
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-4
10-3
10-2
10-1
100
t p (s) 11001 2
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-4
10-3
10-2
10-1
100
t p (s) 101102
At
D=
RthJH =
tp / T
1,02
K/W
At
D=
RthJH =
tp / T
1,87
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,08
0,12
0,47
0,26
Tau (s)
4,3E+00
1,0E+00
1,5E-01
4,9E-02
R (C/W)
0,08
0,22
1,10
0,21
0,15
0,12
Tau (s)
2,9E+00
4,4E-01
1,1E-01
3,3E-02
7,2E-03
1,0E-03
copyright Vincotech
18
Revision: 1
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