10-FZ06NRA084FP02-P969F78 Datasheet, PDF (8/26 Pages) Vincotech – 75A parallel switch (75A and 99m MOSFET)

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10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
0,8
0,6
MOSFET+IGBT
E_{on High T}
E_{off High T}
0,4
0,2
0,0
0
20
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
350
V
±15
V
4
Ω
4
Ω
E_{off Low T}
E_{on Low T}
40
60
I C (A)
80
Gate on/off resistor of IGBT is fix 4Ω
MOSFET turn off delayed with 350 nS
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
0,6
0,5
MOSFET+IGBT
E_{on High T}
0,4
E_{on Low T}
0,3
E_{off High T}
0,2
E_{off Low T}
0,1
0,0
0
20
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
350
V
±15
V
40
A
40
60
RG(Ω )
80
Gate on/off resistor of IGBT is fix 4Ω
MOSFET turn off delayed with 350 nS
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
0,25
0,20
0,15
FWD
E_{rec High T}
E_{rec Low T}
0,10
0,05
0,00
0
20
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
R_gon =
4
Ω
40
60
I C (A)
80
Gate on/off resistor of IGBT is fix 4Ω
MOSFET turn off delayed with 350 nS
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,20
FWD
0,15
E_{rec High T}
0,10
0,05
0,00
0
20
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
I_C =
40
A
E_{rec Low T}
40
60
RG(Ω )
80
Gate on/off resistor of IGBT is fix 4Ω
MOSFET turn off delayed with 350 nS
copyright Vincotech
8
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