10-FZ06NRA084FP02-P969F78 Datasheet, PDF (17/26 Pages) Vincotech – 75A parallel switch (75A and 99m MOSFET)

Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
10
8
6
4
2
0
0
20
40
60
At
At
T_j =
V_CE =
V_GE =
R_gon =
2152/5125 °C
350
V
±15
V
4
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
120
100
80
60
40
20
0
0
20
40
60
At
T_j =
V_CE =
V_GE =
R_gon =
2152/5125 °C
350
V
±15
V
4
Ω
Boost
10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
FWD
Q_{rr High T}
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
8
6
FWD
Q_{rr High T}
4
Q_{rr Low T}
2
Q_{rr Low T}
0
80
I C (A) ¹⁰⁰
0
4
8
12
At
T_j =
V_R =
I_F =
V_GE =
1225/5125 °C
350
V
50
A
±15
V
FWD
I_{RRM High T}
I_{RRM Low T}
80 _{I C (A)}
100
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
120
100
80
60
40
20
0
0
5
10
At
T_j =
V_R =
I_F =
V_GE =
1225/5125 °C
350
V
50
A
±15
V
16
R gon ( Ω) ²⁰
FWD
I_{RRM High T}
I_{RRM Low T}
15
R gon ( Ω)
20
copyright Vincotech
17
Revision: 1