10-FZ06NRA084FP02-P969F78 Datasheet, PDF (20/26 Pages) Vincotech – 75A parallel switch (75A and 99m MOSFET)

Figure 25
Typical diode forward current as
a function of forward voltage
I_F = f(V_F)
40
10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
Boost Inv.
IGBT Inverse Diode
Figure 26
Diode transient thermal impedance
as a function of pulse width
Z_thJH = f(t_p)
10¹
IGBT Inverse Diode
30
20
10
0
0
At
t_p =
T_j = T_jmax-25°C
3
6
250
µs
Figure 27
Power dissipation as a
function of heatsink temperature
P_tot = f(T_h)
100
10⁰
10^-1
T_j = 25°C
9
12
V F (V) ¹⁵
10^-2
10^-5
10^-4
10^-3
10^-2
At
D=
R_thJH =
tp / T
2,17
K/W
IGBT Inverse Diode
Figure 28
Forward current as a
function of heatsink temperature
I_F = f(T_h)
15
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10^-1
10⁰
t p (s)
1100¹²
IGBT Inverse Diode
80
12
60
9
40
6
20
3
0
0
50
100
At
T_j =
175
ºC
0
150
Th ( ^o C)
200
0
50
100
At
T_j =
175
ºC
150
Th ( ^o C)
200
copyright Vincotech
20
Revision: 1