10-FZ06NRA084FP02-P969F78 Datasheet, PDF (16/26 Pages) Vincotech – 75A parallel switch (75A and 99m MOSFET)

Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1
0,1
0,01
Boost
10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
t_doff
t_don
0,1
t_f
t_r
0,01
IGBT
t_doff
t_don
t_f
t_r
0,001
0
20
40
60
With an inductive load at
T_j =
125
°C
V_CE =
350
V
V_GE =
±15
V
R_gon =
4
Ω
R_goff =
4
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,15
0,12
0,09
0,06
0,03
0,00
0
20
40
60
At
T_j =
V_CE =
V_GE =
R_gon =
2152/5125 °C
350
V
±15
V
4
Ω
80
I C (A) ¹⁰⁰
0,001
0
5
10
With an inductive load at
T_j =
125
°C
V_CE =
350
V
V_GE =
±15
V
I_C =
50
A
FWD
t_{rr High T}
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,4
0,3
0,2
t_{rr Low T}
0,1
80
I C (A)
100
0,0
0
5
10
At
T_j =
V_R =
I_F =
V_GE =
1225/5125 °C
350
V
50
A
±15
V
15
R G ( Ω)
20
FWD
t_{rr High T}
t_{rr Low T}
15
20
R gon ( Ω)
copyright Vincotech
16
Revision: 1