10-FZ06NRA084FP02-P969F78 Datasheet, PDF (10/26 Pages) Vincotech – 75A parallel switch (75A and 99m MOSFET)

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10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
2,0
1,5
FWD
Q_{rr High T}
1,0
Q_{rr Low T}
0,5
0,0
0
At
At
T_j =
V_CE =
V_GE =
R_gon =
20
25/125 °C
350
V
±15
V
4
Ω
40
60
I C (A)
80
Gate on/off resistor of IGBT is fix 4Ω
MOSFET turn off delayed with 350 nS
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
1,2
1,0
FWD
Q_{rr High T}
0,8
0,6
0,4
Q_{rr Low T}
0,2
0,0
0
At
T_j =
V_R =
I_F =
V_GE =
20
25/125 °C
350
V
40
A
±15
V
40
60
R gon ( Ω)
80
Gate on/off resistor of IGBT is fix 4Ω
MOSFET turn off delayed with 350 nS
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
100
80
60
40
FWD
I_{RRM Low T}
I_{RRM High T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
100
80
60
40
FWD
I_{RRM High T}
I_{RRM Low T}
20
20
0
0
At
T_j =
V_CE =
V_GE =
R_gon =
20
25/125 °C
350
V
±15
V
4
Ω
40
60
I C (A)
80
Gate on/off resistor of IGBT is fix 4Ω
MOSFET turn off delayed with 350 nS
0
0
At
T_j =
V_R =
I_F =
V_GE =
20
25/125 °C
350
V
40
A
±15
V
40
60
R gon ( Ω)
80
Gate on/off resistor of IGBT is fix 4Ω
MOSFET turn off delayed with 350 nS
copyright Vincotech
10
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