10-FZ06NRA084FP02-P969F78 Datasheet, PDF (2/26 Pages) Vincotech – 75A parallel switch (75A and 99m MOSFET)

Tj=25°C, unless otherwise specified
Parameter
Buck Diode
Peak Repetitive Reverse Voltage
DC forward current
Non-repetitive Peak Surge Current
Power dissipation per Diode
Maximum Junction Temperature
Buck MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
Boost IGBT
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Boost Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
copyright Vincotech
10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
Maximum Ratings
Symbol
Condition
Value
Unit
V_RRM
I_F
I_FSM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
60Hz Single Half-Sine Wave
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
25
A
34
300
A
40
W
61
150
°C
V_DS
I_D
I_Dpulse
P_tot
Vgs
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
17
A
21
112
A
60
W
91
±20
V
150
°C
V_CE
I_C
I_Cpuls
T_j=T_jmax
t_p limited by T_jmax
P_tot
V_GE
t_SC
V_CC
T_jmax
T_j=T_jmax
T_j≤150°C
V_GE=15V
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
58
A
75
225
A
225
A
93
W
141
±20
V
6
µs
360
V
175
°C
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=T_jmax
t_p limited by T_jmax,
20 kHz Square Wave
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
1200
V
22
A
29
70
A
51
W
77
175
°C
2
Revision: 1