10-FZ06NRA084FP02-P969F78 Datasheet, PDF (15/26 Pages) Vincotech – 75A parallel switch (75A and 99m MOSFET)

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
4
3
2
1
0
0
20
40
60
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
350
V
±15
V
4
Ω
4
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
3
2,5
2
1,5
1
0,5
0
0
20
40
60
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
R_gon =
4
Ω
Boost
10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
IGBT
E_{off High T}
E_{off Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
2,5
2,0
1,5
1,0
E_{on High T}
E_{on Low T}
0,5
80
I C (A)
100
0,0
0
5
10
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
350
V
±15
V
50
A
IGBT
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
2,5
2
1,5
E_{rec Low T}
1
0,5
0
80
I C (A) ¹⁰⁰
0
5
10
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
I_C =
50
A
IGBT
E_{off High T}
E_{on High T}
E_{off Low T}
E_{on Low T}
15
R_G(Ω )
20
IGBT
E_{rec High T}
E_{rec Low T}
15
R G ( Ω)
20
copyright Vincotech
15
Revision: 1