10-FY06RIA080MF-M537D68 Datasheet, PDF (9/31 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY06RIA080MF-M537D68
preliminary datasheet
Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1,00
0,10
0,01
Low Side
Low Side MOSFET and High Side FWD
MOSFET
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1,00
t_doff
0,10
t_don
t_r
0,01
t_f
0,00
0
10
20
With an inductive load at
T_j =
125
°C
V_CE =
400
V
V_GE =
10
V
R_gon =
8,0
Ω
R_goff =
8,0
Ω
30
I C (A)
40
0,00
0
10
20
With an inductive load at
T_j =
125
°C
V_CE =
400
V
V_GE =
10
V
I_C =
20
A
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,05
0,04
0,03
0,02
0,01
FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,08
t_{rr High T}
0,06
0,04
t_{rr Low T}
0,02
MOSFET
t_doff
t_don
t_r
t_f
30
R G ( Ω)
40
FWD
t_{rr High T}
t_{rr Low T}
0,00
0
10
20
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
10
V
8,0
Ω
30
I C (A)
40
0,00
0
10
20
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
400
V
20
A
10
V
30
R gon ( Ω)
40
Copyright by Vincotech
9
Revision: 1