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10-FY06RIA080MF-M537D68 Datasheet, PDF (27/31 Pages) Vincotech – Low inductive 12mm flow1 package
10-FY06RIA080MF-M537D68
preliminary datasheet
Switching Definitions High Side IGBT
General conditions
Tj
Rgon
Rgoff
= 125 °C
= 8Ω
= 8Ω
Figure 1
High Side IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
(tEoff = integrating time for Eoff)
125
%
tdoff
100
VGE 90%
VCE 90%
75
IC
50
tEoff
25
VCE
0
VGE
IC 1%
-25
-0,4
-0,2
0
0,2
0,4
0,6
0,8
time (us)
VGE (0%) =
VGE (100%) =
VC (100%) =
IC (100%) =
tdoff =
tEoff =
-15
V
15
V
400
V
20
A
0,10
μs
0,17
μs
Figure 2
High Side IGBT
Turn-on Switching Waveforms & definition of tdon, tEon
(tEon = integrating time for Eon)
250
%
IC
200
150
VCE
100
50
0
-50
3,8
VGE (0%) =
VGE (100%) =
VC (100%) =
IC (100%) =
tdon =
tEon =
tdon
V GE10%
IC10% VCE 3%
tEon
3,95
4,1
-15
V
15
V
400
V
20
A
0,09
μs
0,12
μs
VGE
4,25
time(us) 4,4
Figure 3
Turn-off Switching Waveforms & definition of tf
125
%
IC
100
fitted
IC 90%
High Side IGBT
VCE
75
IC 60%
50
IC 40%
25
IC 10%
0
tf
Figure 4
Turn-on Switching Waveforms & definition of tr
250
%
IC
200
150
VCE
100
50
0
IC 90%
tr
IC 10%
High Side IGBT
-25
0,00
0,05
0,10
0,15
0,20
0,25
0,30
time (us)
VC (100%) =
IC (100%) =
tf =
400
V
20
A
0,080
μs
-50
3,95
VC (100%) =
IC (100%) =
tr =
4
4,05
400
V
20
A
0,011
μs
4,1
time(us) 4,15
Copyright by Vincotech
27
Revision: 1