10-FY06RIA080MF-M537D68 Datasheet, PDF (16/31 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1
t_doff
t_f
0,1 _tdon
0,01
t_r
0,001
0
10
20
With an inductive load at
T_j =
125
°C
V_CE =
200
V
V_GE =
±15
V
R_gon =
8,0
Ω
R_goff =
8,0
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,25
0,20
0,15
0,10
0,05
0,00
0
10
20
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
200
V
±15
V
8,0
Ω
10-FY06RIA080MF-M537D68
preliminary datasheet
High Side
High Side IGBT and Low Side FWD
IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
0,1
0,01
IGBT
t_doff
t_don
t_f
t_r
30
I C (A)
40
0,001
0
10
20
With an inductive load at
T_j =
125
°C
V_CE =
200
V
V_GE =
±15
V
I_C =
20
A
FWD
t_{rr High T}
t_{rr Low T}
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,4
0,3
0,2
0,1
0
30
I C (A)
40
0
10
20
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
200
V
20
A
±15
V
30
RG(Ω )
40
FWD
t_{rr High T}
t_{rr Low T}
30
R gon ( Ω) ⁴⁰
Copyright by Vincotech
16
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