10-FY06RIA080MF-M537D68 Datasheet, PDF (28/31 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY06RIA080MF-M537D68
preliminary datasheet
Switching Definitions High Side IGBT
Figure 5
Turn-off Switching Waveforms & definition of t_Eoff
130
%
P_off
100
High Side IGBT
I_{C 1%}
E_off
Figure 6
Turn-on Switching Waveforms & definition of t_Eon
130
%
P_on
100
High Side IGBT
E_on
70
70
40
U_{ge 90%}
10
t_Eoff
-20
-0,3
-0,15
0
0,15
0,3
0,45
0,6
0,75
time (us)
P_off (100%) =
E_off (100%) =
t_Eoff =
7,96
kW
1,48
mJ
0,17
μs
40
10
-20
3,8
U_ge10%
t_Eon
3,88
3,96
4,04
P_on (100%) =
E_on (100%) =
t_Eon =
7,9608 kW
0,38
mJ
0,12
μs
U_{ce 3%}
4,12
4,2
time(us)
Figure 7
Gate voltage vs Gate charge (measured)
20
15
10
5
0
-5
-10
-15
-20
-200
0
200
400
V_GEoff =
V_GEon =
V_C (100%) =
I_C (100%) =
Q_g =
-15
V
15
V
400
V
20
A
3441,54 nC
High Side IGBT
Figure 8
Turn-off Switching Waveforms & definition of t_rr
150
%
I_d
100
t_rr
50
U_d
0
-50
Low Side FWD
fitted
I_{RRM 10%}
600
800
Q_g (nC)
-100
-150
3,9
V_d (100%) =
I_d (100%) =
I_RRM (100%) =
t_rr =
4
400
20
-29
0,04
I_{RRM 90%}
I_{RRM 100%}
4,1
V
A
A
μs
4,2
4,3
time(us)
Copyright by Vincotech
28
Revision: 1