10-FY06RIA080MF-M537D68 Datasheet, PDF (15/31 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
1,8
1,5
1,2
0,9
0,6
0,3
0
0
10
20
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
200
V
±15
V
8,0
Ω
8,0
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
0,8
0,6
0,4
0,2
0
0
10
20
With an inductive load at
T_j =
25/125 °C
V_CE =
200
V
V_GE =
±15
V
R_gon =
8,0
Ω
10-FY06RIA080MF-M537D68
preliminary datasheet
High Side
High Side IGBT and Low Side FWD
IGBT
E_{off High T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
1,8
1,5
1,2
E_{off Low T}
0,9
E_{on High T}
E_{on Low T}
0,6
0,3
0
30
I C (A)
40
0
10
20
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
200
V
±15
V
20
A
FWD
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,8
0,6
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
30
R _G( Ω ) ⁴⁰
FWD
E_{rec Low T}
0,4
0,2
E_{rec High T}
E_{rec Low T}
0
30
I C (A)
40
0
10
20
With an inductive load at
T_j =
25/125 °C
V_CE =
200
V
V_GE =
±15
V
I_C =
20
A
30
R _G ( Ω ) 40
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15
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