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| 10-FY06RIA080MF-M537D68 Datasheet, PDF (18/31 Pages) Vincotech – Low inductive 12mm flow1 package | |||
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Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
6000
dIrec/dt T
5000
dIo/dt T
4000
3000
2000
1000
0
0
10
20
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
200
V
±15
V
8,0
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
10-FY06RIA080MF-M537D68
preliminary datasheet
High Side
High Side IGBT and Low Side FWD
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
20000
16000
12000
8000
4000
30
I C (A)
40
IGBT
0
0
10
20
At
Tj =
VR =
IF =
VGE =
25/125 °C
200
V
20
A
±15
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
FWD
dIrec/dt T
dI0/dt T
30
R gon ( â¦) 40
FWD
100
10-1
10-2
10-3
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,08
K/W
IGBT thermal model values
R (C/W)
0,05
0,09
0,32
0,38
0,20
Tau (s)
3,76
1,04
0,25
0,09
0,01
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s)
101
10-2
10-3
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
2,37
K/W
FWD thermal model values
R (C/W)
0,05
0,14
0,69
0,57
0,62
Tau (s)
8,95
1,10
0,20
0,06
0,01
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 110012
Copyright by Vincotech
18
Revision: 1
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