10-FY06RIA080MF-M537D68 Datasheet, PDF (2/31 Pages) Vincotech – Low inductive 12mm flow1 package

High Side IGBT ( T3 , T4 )
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Low Side FWD ( D5 , D6 )
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
High Side Inverse Diode ( D9 , D10 )
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
High Side FWD ( D7 , D8 )
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V_CE
I_C
I_{c pulse}
P_tot
V_GE
t_SC
V_CC
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_j≤150°C
V_GE=15V
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_c=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
10-FY06RIA080MF-M537D68
preliminary datasheet
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
38
A
44
150
A
88
W
134
±20
V
6
μs
360
V
175
°C
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
26
A
35
30
A
45
W
68
150
°C
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
19
A
26
20
A
37
W
57
175
°C
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
600
V
24
A
32
40
A
40
W
61
175
°C
Copyright by Vincotech
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Revision: 1